Vapor phase epitaxial lifto! of GaAs and silicon single crystal "lms
نویسندگان
چکیده
Among the technologies for integrating GaAs devices with Si VLSI chips, epitaxial lifto! (ELO) is conspicuous for maintaining the quality of the single crystal epitaxial GaAs "lms. Traditionally, ELO is implemented in aqueous HF solution. It would be cleaner and simpler if ELO could be implemented in a vapor process. In this article, we will present the potential improvements in the ELO process by using a vapor phase etch to undercut thin "lms. ( 1999 Elsevier Science B.V. All rights reserved.
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